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| data sheet 1 aug. 2010 rev. 2. 3 bcd semiconductor manufacturing limited high speed, extremely low noise ldo regulator ap2121 general description the ap2121 series are positive voltage regulator ics fabricated by cmos proce ss. each of these ics con- sists of a voltage reference, an error amplifier, a resis- tor network for setting output voltage, a current limit circuit for current protecti on and a chip-enable circuit (5-pin products only). the ap2121 series feature high supply voltage ripple rejection, low dropout voltage, low noise, high output voltage accuracy, and low current consumption which make them ideal for use in various battery-powered devices. the ap2121 series have 1.2v, 1.3v, 1.5v, 1.8v, 2.5v, 2.8v, 3.0v, 3.2v and 3.3v versions. the ap2121 are available in standard sot-23-3 and sot-23-5 packages. features low dropout voltage at i out =100ma: 150mv typical (except 1.2v, 1.3v and 1.5v versions) low standby current: 0.1 a typical low quiescent current: 25 a typical high ripple rejection: 70db typical f=1khz output current: more than 200ma (300ma limit) extremely low noise: 30 vrms (10hz to 100khz) excellent line regulation: 4mv typical excellent load regulation: 12mv typical high output voltage accuracy: 2% excellent line transient response and load transient response compatible with low esr ceramic capacitor (as low as 1 f) applications mobile phones, cordless phones wireless communication equipment portable games cameras, video recorders sub-board power supplies for telecom equip- ment battery powered equipment figure 1. package types of ap2121 sot-23-5 sot-23-3
data sheet 2 aug. 2010 rev. 2. 3 bcd semiconductor manufacturing limited high speed, extremely low noise ldo regulator ap2121 pin configuration figure 2. pin configuration of ap2121 (top view) k package (sot-23-5) nc v out v in gnd 1 2 3 4 5 ce n package (sot-23-3) v in gnd 1 2 3 v out pin description pin number pin name function sot-23-3 sot-23-5 31 v in input voltage 1 2 gnd ground 3 ce active high enable input pin. l ogic high=enable, l ogic low=shutdown 4 nc no connection 25v out regulated output voltage data sheet 3 aug. 2010 rev. 2. 3 bcd semiconductor manufacturing limited high speed, extremely low noise ldo regulator ap2121 functional block diagram figure 3. functional block diagram of ap2121 sot-23-5 vref current limit vref current limit v in ce v out gnd 2 3 1 5 v in v out gnd 1 3 2 sot-23-3 data sheet 4 aug. 2010 rev. 2. 3 bcd semiconductor manufacturing limited high speed, extremely low noise ldo regulator ap2121 package temperature range condition part number marking id packing type lead free green lead free green sot-23-3 -40 to 85 o c ap2121n-1.2tre1 ap2121n-1.2trg1 ef9 gf9 tape & reel ap2121n-1.3tre1 ap2121n-1.3trg1 eg9 gg9 tape & reel ap2121n-1.5tre1 ap2121n-1.5trg1 ef1 gf1 tape & reel ap2121n-1.8tre1 ap2121n-1.8trg1 ef3 gf3 tape & reel ap2121n-2.5tre1 ap2121n-2.5trg1 ef4 gf4 tape & reel ap2121n-2.8tre1 ap2121n-2.8trg1 ef5 gf5 tape & reel ap2121n-3.0tre1 ap2121n-3.0trg1 ef6 gf6 tape & reel ap2121n-3.2tre1 ap2121n-3.2trg1 ef7 gf7 tape & reel ap2121n-3.3tre1 ap2121n-3.3trg1 ef8 gf8 tape & reel sot-23-5 -40 to 85 o c active high (pull-down resistor built-in) ap2121ak-1.2tre1 ap2121ak-1.2trg1 e1t g1t tape & reel active high (pull-down resistor built-in) ap2121ak-1.3tre1 ap2121ak-1.3trg1 e1r g1r tape & reel active high (pull-down resistor built-in) ap2121ak-1.5tre1 ap2121ak-1.5trg1 e1z g1z tape & reel active high (pull-down resistor built-in) ap2121ak-1.8tre1 ap2121ak-1.8trg1 e1u g1u tape & reel active high (pull-down resistor built-in) ap2121ak-2.5tre1 ap2121ak-2.5trg1 e1v g1v tape & reel active high (pull-down resistor built-in) ap2121ak-2.8tre1 ap2121ak-2.8trg1 e1w g1w tape & reel active high (pull-down resistor built-in) ap2121ak-3.0tre1 ap2121ak-3.0trg1 e1x g1x tape & reel active high (pull-down resistor built-in) ap2121ak-3.2tre1 ap2121ak-3.2trg1 e3z g3z tape & reel active high (pull-down resistor built-in) ap2121ak-3.3tre1 ap2121ak-3.3trg1 e1y g1y tape & reel circuit type package e1: lead free ap2121 - tr: tape and reel ordering information 1.5: fixed output 1.5v 2.5: fixed output 2.5v n: sot-23-3 3.0: fixed output 3.0v k: sot-23-5 a: active high (pull-down resistor built-in) blank: no enable function 1.8: fixed output 1.8v 2.8: fixed output 2.8v 3.2: fixed output 3.2v 3.3: fixed output 3.3v 1.3: fixed output 1.3v 1.2: fixed output 1.2v bcd semiconductor's pb-free products, as designated with "e1" suffix in th e part number, are rohs compliant. products with "g1" suffix are available in green packages. g1: green data sheet 5 aug. 2010 rev. 2. 3 bcd semiconductor manufacturing limited high speed, extremely low noise ldo regulator ap2121 parameter symbol value unit input voltage v in 6.5 v enable input voltage v ce -0.3 to v in +0.3 v output current i out 300 ma junction temperature t j 150 o c storage temperature range t stg -65 to 150 o c lead temperature (soldering, 10sec) t lead 260 o c thermal resistance (junction to ambient) (note 2) ja sot-23-3 250 o c/w sot-23-5 250 esd (human body model) esd 2000 v esd (machine model) esd 200 v absolute maximum ratings (note 1) parameter symbol min max unit input voltage v in 26 v operating junction temperature range t j -40 85 o c recommended operating conditions note 1: stresses greater than those li sted under "absolute maximu m ratings" may cause permanen t damage to the device. these are stress ratings only, and functiona l operation of the device at these or any other conditions beyond those indicated under "recommended operating conditions" is not implied. exposure to "absolut e maximum ratings" for extended periods may affect device reliability. note 2: absolute maximum rati ngs indicate limits beyond which damage to the component may occur. electrical specifica- tions do not apply when operating the device outside of its operating ra tings. the maximum allowabl e power dissipation is a function of the maximum junction temperature, t j(max), the junction-to-ambient thermal resistance, ja, and the ambient tem- perature, t a. the maximum allowable power diss ipation at any ambient temperat ure is calculated using: p d(max) =(t j(max) - t a )/ ja. exceeding the maximum allowable power dissipation will result in excessive die temperature. data sheet 6 aug. 2010 rev. 2. 3 bcd semiconductor manufacturing limited high speed, extremely low noise ldo regulator ap2121 electrical characteristics parameter symbol conditions min typ max unit output voltage v out v in =2.2v 1ma i out 30ma 1.176 1.2 1.224 v input voltage v in 6v output current i out v in -v out =1v 200 ma load regulation v rload v in =2.2v 1ma i out 80ma 12 40 mv line regulation v rline 2.2v v in 6v i out =30ma 416mv dropout voltage v drop i out =10ma 700 900 mv i out =100ma 700 900 i out =150ma 700 900 i out =200ma 700 900 quiescent current i q v in =2.2v, i out = 0ma 25 50 a standby current i std v in =2.2v v ce in off mode 0.1 1 a power supply rejection ratio psrr ripple 0.5vp-p, f=1khz v in =2.2v 70 db output voltage temperature coefficient ? v out / ? t i out =30ma 120 v/ o c ( ? v out /v out )/ ? t 100 ppm/ o c short current limit i limit v out =0v 50 ma rms output noise v noise t a =25 o c 10hz f 100khz 30 vrms ce "high" voltage ce i nput voltage "high" 1.5 v ce "low" voltage ce i nput voltage "low" 0.25 v ce pull-down resistance r pd 2.5 5 10 m ? thermal resistance (junction to case) jc sot-23-3 74 o c/w sot-23-5 74 (v in =2.2v, t j =25 o c, c in =1 f, c out =1 f, bold typeface applies over -40 o c t j 85 o c, unless otherwise specified.) ap2121-1.2 electrical characteristics data sheet 7 aug. 2010 rev. 2. 3 bcd semiconductor manufacturing limited high speed, extremely low noise ldo regulator ap2121 parameter symbol conditions min typ max unit output voltage v out v in =2.3v 1ma i out 30ma 1.274 1.3 1.326 v input voltage v in 6v output current i out v in -v out =1v 200 ma load regulation v rload v in =2.3v 1ma i out 80ma 12 40 mv line regulation v rline 2.3v v in 6v i out =30ma 416mv dropout voltage v drop i out =10ma 600 800 mv i out =100ma 600 800 i out =150ma 600 800 i out =200ma 600 800 quiescent current i q v in =2.3v, i out = 0ma 25 50 a standby current i std v in =2.3v v ce in off mode 0.1 1 a power supply rejection ratio psrr ripple 0.5vp-p, f=1khz v in =2.3v 70 db output voltage temperature coefficient ? v out / ? t i out =30ma 130 v/ o c ( ? v out /v out )/ ? t 100 ppm/ o c short current limit i limit v out =0v 50 ma rms output noise v noise t a =25 o c 10hz f 100khz 30 vrms ce "high" voltage ce input voltage "high" 1.5 v ce "low" voltage ce input voltage "low" 0.25 v ce pull-down resistance r pd 2.5 5 10 m ? thermal resistance (junction to case) jc sot-23-3 74 o c/w sot-23-5 74 (v in =2.3v, t j =25 o c, c in =1 f, c out =1 f, bold typeface applies over -40 o c t j 85 o c, unless otherwise specified.) electrical characteristics (continued) ap2121-1.3 electrical characteristics data sheet 8 aug. 2010 rev. 2. 3 bcd semiconductor manufacturing limited high speed, extremely low noise ldo regulator ap2121 parameter symbol conditions min typ max unit output voltage v out v in =2.5v 1ma i out 30ma 1.47 1.5 1.53 v input voltage v in 6v output current i out v in -v out =1v 200 ma load regulation v rload v in =2.5v 1ma i out 80ma 12 40 mv line regulation v rline 2.3v v in 6v i out =30ma 416mv dropout voltage v drop i out =10ma 400 600 mv i out =100ma 400 600 i out =150ma 400 600 i out =200ma 400 600 quiescent current i q v in =2.5v, i out = 0ma 25 50 a standby current i std v in =2.5v v ce in off mode 0.1 1 a power supply rejection ratio psrr ripple 0.5vp-p, f=1khz v in =2.5v 70 db output voltage temperature coefficient ? v out / ? t i out =30ma 150 v/ o c ( ? v out /v out )/ ? t 100 ppm/ o c short current limit i limit v out =0v 50 ma rms output noise v noise t a =25 o c 10hz f 100khz 30 vrms ce "high" voltage ce i nput voltage "high" 1.5 v ce "low" voltage ce i nput voltage "low" 0.25 v ce pull-down resistance r pd 2.5 5 10 m ? thermal resistance (junction to case) jc sot-23-3 74 o c/w sot-23-5 74 (v in =2.5v, t j =25 o c, c in =1 f, c out =1 f, bold typeface applies over -40 o c t j 85 o c, unless otherwise specified.) ap2121-1.5 electrical characteristics electrical characteristics (continued) 9 aug. 2010 rev. 2. 3 bcd semiconductor manufacturing limited high speed, extremely low noise ldo regulator ap2121 data sheet parameter symbol conditions min typ max unit output voltage v out v in =2.8v 1ma i out 30ma 1.764 1.8 1.836 v input voltage v in 6v output current i out v in -v out =1v 200 ma load regulation v rload v in =2.8v 1ma i out 80ma 12 40 mv line regulation v rline 2.3v v in 6v i out =30ma 416mv dropout voltage v drop i out =10ma 20 40 mv i out =100ma 150 300 i out =150ma 200 400 i out =200ma 250 500 quiescent current i q v in =2.8v, i out = 0ma 25 50 a standby current i std v in =2.8v v ce in off mode 0.1 1 a power supply rejection ratio psrr ripple 0.5vp-p, f=1khz v in =2.8v 70 db output voltage temperature coefficient ? v out / ? t i out =30ma 180 v/ o c ( ? v out /v out )/ ? t 100 ppm/ o c short current limit i limit v out =0v 50 ma rms output noise v noise t a =25 o c 10hz f 100khz 30 vrms ce "high" voltage ce input voltage "high" 1.5 v ce "low" voltage ce input voltage "low" 0.25 v ce pull-down resistance r pd 2.5 5 10 m ? thermal resistance (junction to case) jc sot-23-3 74 o c/w sot-23-5 74 (v in =2.8v, t j =25 o c, c in =1 f, c out =1 f, bold typeface applies over -40 o c t j 85 o c, unless otherwise specified.) electrical characteristics (continued) ap2121-1.8 electrical characteristics data sheet 10 aug. 2010 rev. 2. 3 bcd semiconductor manufacturing limited high speed, extremely low noise ldo regulator ap2121 electrical characteristics (continued) parameter symbol conditions min typ max unit output voltage v out v in =3.5v 1ma i out 30ma 2.45 2.5 2.55 v input voltage v in 6v output current i out v in -v out =1v 200 ma load regulation v rload v in =3.5v 1ma i out 80ma 12 40 mv line regulation v rline 3v v in 6v i out =30ma 416mv dropout voltage v drop i out =10ma 20 40 mv i out =100ma 150 300 i out =150ma 200 400 i out =200ma 250 500 quiescent current i q v in =3.5v, i out = 0ma 25 50 a standby current i std v in =3.5v v ce in off mode 0.1 1 a power supply rejection ratio psrr ripple 0.5vp-p, f=1khz v in =3.5v 70 db output voltage temperature coefficient ? v out / ? t i out =30ma 250 v/ o c ( ? v out /v out )/ ? t 100 ppm/ o c short current limit i limit v out =0v 50 ma rms output noise v noise t a =25 o c 10hz f 100khz 30 vrms ce "high" voltage ce input voltage "high" 1.5 v ce "low" voltage ce input voltage "low" 0.25 v ce pull-down resistance r pd 2.5 5 10 m ? thermal resistance (junction to case) jc sot-23-3 74 o c/w sot-23-5 74 (v in =3.5v, t j =25 o c, c in =1 f, c out =1 f, bold typeface applies over -40 o c t j 85 o c, unless otherwise specified.) ap2121-2.5 electrical characteristics 11 aug. 2010 rev. 2. 3 bcd semiconductor manufacturing limited high speed, extremely low noise ldo regulator ap2121 data sheet parameter symbol conditions min typ max unit output voltage v out v in =3.8v 1ma i out 30ma 2.744 2.8 2.856 v input voltage v in 6v output current i out v in -v out =1v 200 ma load regulation v rload v in =3.8v 1ma i out 80ma 12 40 mv line regulation v rline 3.3v v in 6v i out =30ma 416mv dropout voltage v drop i out =10ma 20 40 mv i out =100ma 150 300 i out =150ma 200 400 i out =200ma 250 500 quiescent current i q v in =3.8v, i out = 0ma 25 50 a standby current i std v in =3.8v v ce in off mode 0.1 1 a power supply rejection ratio psrr ripple 0.5vp-p, f=1khz v in =3.8v 70 db output voltage temperature coefficient ? v out / ? t i out =30ma 280 v/ o c ( ? v out /v out )/ ? t 100 ppm/ o c short current limit i limit v out =0v 50 ma rms output noise v noise t a =25 o c 10hz f 100khz 30 vrms ce "high" voltage ce in put voltage "high" 1.5 v ce "low" voltage ce input voltage "low" 0.25 v ce pull-down resistance r pd 2.5 5 10 m ? thermal resistance (junction to case) jc sot-23-3 74 o c/w sot-23-5 74 (v in =3.8v, t j =25 o c, c in =1 f, c out =1 f, bold typeface applies over -40 o c t j 85 o c, unless otherwise specified.) electrical characteristics (continued) ap2121-2.8 electrical characteristics data sheet 12 aug. 2010 rev. 2. 3 bcd semiconductor manufacturing limited high speed, extremely low noise ldo regulator ap2121 parameter symbol conditions min typ max unit output voltage v out v in =4v 1ma i out 30ma 2.94 3.0 3.06 v input voltage v in 6v output current i out v in -v out =1v 200 ma load regulation v rload v in =4v 1ma i out 80ma 12 40 mv line regulation v rline 3.5v v in 6v i out =30ma 416mv dropout voltage v drop i out =10ma 20 40 mv i out =100ma 150 300 i out =150ma 200 400 i out =200ma 250 500 quiescent current i q v in =4v, i out = 0ma 25 50 a standby current i std v in =4v v ce in off mode 0.1 1 a power supply rejection ratio psrr ripple 0.5vp-p, f=1khz v in =4v 70 db output voltage temperature coefficient ? v out / ? t i out =30ma 300 v/ o c ( ? v out /v out )/ ? t 100 ppm/ o c short current limit i limit v out =0v 50 ma rms output noise v noise t a =25 o c 10hz f 100khz 30 vrms ce "high" voltage ce i nput voltage "high" 1.5 v ce "low" voltage ce i nput voltage "low" 0.25 v ce pull-down resistance r pd 2.5 5 10 m ? thermal resistance (junction to case) jc sot-23-3 74 o c/w sot-23-5 74 (v in =4v, t j =25 o c, c in =1 f, c out =1 f, bold typeface applies over -40 o c t j 85 o c, unless otherwise specified.) electrical characteristics (continued) ap2121-3.0 electrical characteristics 13 aug. 2010 rev. 2. 3 bcd semiconductor manufacturing limited high speed, extremely low noise ldo regulator ap2121 data sheet electrical characteristics (continued) parameter symbol conditions min typ max unit output voltage v out v in =4.2v 1ma i out 30ma 3.136 3.2 3.264 v input voltage v in 6v output current i out v in -v out =1v 200 ma load regulation v rload v in =4.2v 1ma i out 80ma 12 40 mv line regulation v rline 3.7v v in 6v i out =30ma 416mv dropout voltage v drop i out =10ma 20 40 mv i out =100ma 150 300 i out =150ma 200 400 i out =200ma 250 500 quiescent current i q v in =4.2v, i out = 0ma 25 50 a standby current i std v in =4.2v v ce in off mode 0.1 1 a power supply rejection ratio psrr ripple 0.5vp-p, f=1khz v in =4.2v 70 db output voltage temperature coefficient ? v out / ? t i out =30ma 320 v/ o c ( ? v out /v out )/ ? t 100 ppm/ o c short current limit i limit v out =0v 50 ma rms output noise v noise t a =25 o c 10hz f 100khz 30 vrms ce "high" voltage ce input voltage "high" 1.5 v ce "low" voltage ce input voltage "low" 0.25 v ce pull-down resistance r pd 2.5 5 10 m ? thermal resistance (junction to case) jc sot-23-3 74 o c/w sot-23-5 74 (v in =4.2v, t j =25 o c, c in =1 f, c out =1 f, bold typeface applies over -40 o c t j 85 o c, unless otherwise specified.) ap2121-3.2 electrical characteristics data sheet 14 aug. 2010 rev. 2. 3 bcd semiconductor manufacturing limited high speed, extremely low noise ldo regulator ap2121 parameter symbol conditions min typ max unit output voltage v out v in =4.3v 1ma i out 30ma 3.234 3.3 3.366 v input voltage v in 6v output current i out v in -v out =1v 200 ma load regulation v rload v in =4.3v 1ma i out 80ma 12 40 mv line regulation v rline 3.8v v in 6v i out =30ma 416mv dropout voltage v drop i out =10ma 20 40 mv i out =100ma 150 300 i out =150ma 200 400 i out =200ma 250 500 quiescent current i q v in =4.3v, i out = 0ma 25 50 a standby current i std v in =4.3v v ce in off mode 0.1 1 a power supply rejection ratio psrr ripple 0.5vp-p, f=1khz v in =4.3v 70 db output voltage temperature coefficient ? v out / ? t i out =30ma 330 v/ o c ( ? v out /v out )/ ? t 100 ppm/ o c short current limit i limit v out =0v 50 ma rms output noise v noise t a =25 o c 10hz f 100khz 30 vrms ce "high" voltage ce in put voltage "high" 1.5 v ce "low" voltage ce input voltage "low" 0.25 v ce pull-down resistance r pd 2.5 5 10 m ? thermal resistance (junction to case) jc sot-23-3 74 o c/w sot-23-5 74 (v in =4.3v, t j =25 o c, c in =1 f, c out =1 f, bold typeface applies over -40 o c t j 85 o c, unless otherwise specified.) ap2121-3.3 electrical characteristics electrical characteristics (continued) 15 aug. 2010 rev. 2. 3 bcd semiconductor manufacturing limited high speed, extremely low noise ldo regulator ap2121 data sheet typical performance characteristics figure 4. output voltage vs. output current figure 6. output voltage vs. output current figure 5. output voltage vs. output current figure 7. output voltage vs. output current 0 50 100 150 200 250 300 350 0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 output voltage (v) output current (ma) ap2121-1.2 v in =2v v in =2.5v v in =3v 0 50 100 150 200 250 300 350 400 0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 ap2121-1.5 v in = 2v v in = 2.5v v in = 4v output voltage (v) output current (ma) 0 50 100 150 200 250 300 350 0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0 output voltage (v) output current (ma) ap2121-1.8 v in = 2.2v v in = 2.8v v in = 4v 0 50 100 150 200 250 300 350 0.0 0.4 0.8 1.2 1.6 2.0 2.4 2.8 ap2121-2.5 v in = 2.8v v in = 3.5v v in = 5v output voltage (v) output current (ma) data sheet 16 aug. 2010 rev. 2. 3 bcd semiconductor manufacturing limited high speed, extremely low noise ldo regulator ap2121 typical performance ch aracteristics (continued) figure 9. output voltage vs. input voltage 01234567 2.00 2.25 2.50 2.75 3.00 3.25 3.50 output voltage (v) input voltage (v) ap2121-3.0 i out =30ma figure 10. output voltage vs. input voltage 01234567 0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 output voltage (v) input voltage (v) ap2121-1.2 i out =30ma figure 8. output voltage vs. output current figure 11. dropout voltage vs. output current 0 40 80 120 160 200 0.0 0.1 0.2 0.3 0.4 0.5 0.6 minimum operating requirement dropout voltage (v) output current (ma) ap2121-1.2 0 50 100 150 200 250 300 350 0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 output voltage (v) output current (ma) ap2121-3.0 v in =3.3v v in =4v v in =6v 17 aug. 2010 rev. 2. 3 bcd semiconductor manufacturing limited high speed, extremely low noise ldo regulator ap2121 data sheet typical performance ch aracteristics (continued) figure 13. output voltage vs. junction temperature 0 40 80 120 160 200 0.0 0.1 0.2 0.3 0.4 0.5 0.6 dropout voltage (v) output current (ma) ap2121-3.0 figure 12. dropout vo ltage vs. output current -25 0 25 50 75 100 125 2.90 2.92 2.94 2.96 2.98 3.00 3.02 3.04 3.06 3.08 3.10 ap2121-3.0 v in =4v i out =30ma output voltage (v ) junction temperature ( o c) figure 14. output voltage vs. junction temperature -25 0 25 50 75 100 125 1.190 1.192 1.194 1.196 1.198 1.200 1.202 1.204 1.206 1.208 1.210 output voltage (v) junction temperature ( o c) ap2121-1.2 v in =2.2v i out =30ma figure 15. supply current vs. input voltage 01234567 0 5 10 15 20 25 30 supply current ( a) input voltage (v) ap2121-1.2 i out =0ma data sheet 18 aug. 2010 rev. 2. 3 bcd semiconductor manufacturing limited high speed, extremely low noise ldo regulator ap2121 typical performance ch aracteristics (continued) figure 17. supply current vs. junction temperature 01234567 0 10 20 30 40 50 60 supply current ( a) input voltage (v) ap2121-3.0 i out =0ma figure 16. supply current vs. input voltage -25 0 25 50 75 100 125 0 5 10 15 20 25 30 35 40 supply current ( a) junction temperature ( o c) ap2121-3.0 v in =4v i out =0ma figure 18. supply current vs. junction temperature -25 0 25 50 75 100 125 0 5 10 15 20 25 30 35 40 supply current ( a) junction temperature ( o c) ap2121-1.2 v in =2.2v i out =0ma figure 19. line transient (conditions: i out =30ma, c in =1 f, c out =1 f) ? v out (0.05v/div) v in ( 1 v / d i v ) time (100 s/div) ap2121-1. 2 0 2.2 3.2 0.05 -0.05 4.2 19 aug. 2010 rev. 2. 3 bcd semiconductor manufacturing limited high speed, extremely low noise ldo regulator ap2121 data sheet typical performance ch aracteristics (continued) figure 21. load transient (conditions: v in =2.2v, c in =1 f, c out =1 f) v out (0.1v/div) time (200 s/div) ap2121-1.2 1.2 1.1 ap2121-3.0 figure 20. line transient (conditions: i out =30ma, c in =1 f, c out =1 f) ap2121-3.0 time (200 s/div) figure 22. load transient (conditions: v in =4v, c in =1 f, c out =1 f) time (20 s/div) ? v out (0.05v/div) v in ( 1 v / d i v ) 0 4 5 0.05 -0.05 6 1.3 i out (100ma/div) 0 200 3.0 2.9 3.1 100 v out (0.1v/div) i out (100ma/div) 0 200 100 figure 23. psrr vs. frequency 10 100 1k 10k 100k 0 10 20 30 40 50 60 70 80 90 100 psrr (db) frequency (hz) ap2121-1.2 v in =2.2v i out =30ma c in =c out =1 f data sheet 20 aug. 2010 rev. 2. 3 bcd semiconductor manufacturing limited high speed, extremely low noise ldo regulator ap2121 10 100 1k 10k 100k 0 10 20 30 40 50 60 70 80 90 100 psrr (db) frequency (hz) ap2121-3.0 v in =4v i out =30ma c in =c out =1 f typical performance ch aracteristics (continued) figure 24. psrr vs. frequency 21 aug. 2010 rev. 2. 3 bcd semiconductor manufacturing limited high speed, extremely low noise ldo regulator ap2121 data sheet typical application figure 25. typical application of ap2121 note: filter capacitors are required at the ap2121's input and output. 1 f capacitor is required at the input. the minimum output capacitance required for stability should be more than 1 f with esr from 0.01 ? to 100 ?. ceramic capacitors are recommended. v in ap2121-1.2 c in 1 f c out 1 f v out v in v out gnd v in ap2121-3.0 c in 1 f c out 1 f v out v in v out gnd ce nc v in =2.2v v out =1.2v v out =3v v in =4v data sheet 22 aug. 2010 rev. 2. 3 bcd semiconductor manufacturing limited high speed, extremely low noise ldo regulator ap2121 mechanical dimensions sot-23-3 unit: mm(inch) 2.820(0.111) 3.020(0.119) 2.650(0.104) 2.950(0.116) 0.950(0.037) typ 0.300(0.012) 0.500(0.020) 1.500(0.059) 1.700(0.067) 1.800(0.071) 2.000(0.079) 0.300(0.012) 0.600(0.024) 0.100(0.004) 0.200(0.008) 0.000(0.000) 0.150(0.006) 0.900(0.035) 1.300(0.051) 1.450(0.057) max. 0.200(0.008) 0 8 23 aug. 2010 rev. 2. 3 bcd semiconductor manufacturing limited high speed, extremely low noise ldo regulator ap2121 data sheet mechanical dimens ions (continued) sot-23-5 unit: mm(inch) 2.820(0.111) 2 . 6 5 0 ( 0 . 1 0 4 ) 1 . 5 0 0 ( 0 . 0 5 9 ) 0 . 0 0 0 ( 0 . 0 0 0 ) 0.300(0.012) 0.950(0.037) 0 . 9 0 0 ( 0 . 0 3 5 ) 0.100(0.004) 0.200(0.008) 0 . 3 0 0 ( 0 . 0 1 2 ) 8 0 3.020(0.119) 1 . 7 0 0 ( 0 . 0 6 7 ) 2 . 9 5 0 ( 0 . 1 1 6 ) 0.400(0.016) 0 . 1 5 0 ( 0 . 0 0 6 ) 1 . 3 0 0 ( 0 . 0 5 1 ) 0.200(0.008) 0 . 6 0 0 ( 0 . 0 2 4 ) 1.800(0.071) 2.000(0.079) 0 . 7 0 0 ( 0 . 0 2 8 ) r e f t y p 1 . 4 5 0 ( 0 . 0 5 7 ) m a x important notice bcd semiconductor manufacturing limited reserves the right to make changes without further not ice to any products or specifi- cations herein. bcd semiconductor manufacturing limited does not as sume any responsibility for us e of any its products for any particular purpose, nor does bcd semiconductor manufacturi ng limited assume any liability aris ing out of the application or use of any its products or circui ts. bcd semiconductor manufacturing limited does not convey any license under its patent rights or other rights nor the rights of others. - wafer fab shanghai sim-bcd semiconductor manufacturing co., ltd. 800 yi shan road, shanghai 200233, china tel: +86-21-6485 1491, fax: +86-21-5450 0008 main site regional sales office shenzhen office shanghai sim-bcd semiconductor manuf acturing co., ltd., shenzhen office unit a room 1203, skyworth bldg., gaoxin ave.1.s., nanshan district, shenzhen, china tel: +86-755-8826 7951 fax: +86-755-8826 7865 taiwan office bcd semiconductor (taiwan) company limited 4f, 298-1, rui guang road, nei-hu district, taipei, taiwan tel: +886-2-2656 2808 fax: +886-2-2656 2806 usa office bcd semiconductor corp. 30920 huntwood ave. hayward, ca 94544, usa tel : +1-510-324-2988 fax: +1-510-324-2788 - headquarters bcd semiconductor manufacturing limited no. 1600, zi xing road, shanghai zizhu sc ience-based industrial park, 200241, china tel: +86-21-24162266, fax: +86-21-24162277 bcd semiconductor manufacturing limited important notice bcd semiconductor manufacturing limited reserves the right to make changes without further not ice to any products or specifi- cations herein. bcd semiconductor manufacturing limited does not as sume any responsibility for us e of any its products for any particular purpose, nor does bcd semiconductor manufacturi ng limited assume any liability aris ing out of the application or use of any its products or circui ts. bcd semiconductor manufacturing limited does not convey any license under its patent rights or other rights nor the rights of others. - wafer fab shanghai sim-bcd semiconductor manufacturing limited 800, yi shan road, shanghai 200233, china tel: +86-21-6485 1491, fax: +86-21-5450 0008 bcd semiconductor manufacturing limited main site regional sales office shenzhen office shanghai sim-bcd semiconductor manuf acturing co., ltd. shenzhen office advanced analog circuits (shanghai) corporation shenzhen office room e, 5f, noble center, no.1006, 3rd fuzhong road, futian district, shenzhen 518026, china tel: +86-755-8826 7951 fax: +86-755-8826 7865 taiwan office bcd semiconductor (taiwan) company limited 4f, 298-1, rui guang road, nei-hu district, taipei, taiwan tel: +886-2-2656 2808 fax: +886-2-2656 2806 usa office bcd semiconductor corporation 30920 huntwood ave. hayward, ca 94544, u.s.a tel : +1-510-324-2988 fax: +1-510-324-2788 - ic design group advanced analog circuits (shanghai) corporation 8f, zone b, 900, yi shan road, shanghai 200233, china tel: +86-21-6495 9539, fax: +86-21-6485 9673 bcd semiconductor manufacturing limited http://www.bcdsemi.com bcd semiconductor manufacturing limited |
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